Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• engineering. Keywords: carrier concentration; gallium nitride; graphene; nanowires; Raman spectroscopy; scattering on defects; strain; Introduction The combination of excellent electrical and mechanical properties with interesting physical phenomena occurring in two-dimensional structures makes graphene an

• , such as strain induced by mechanical contact between materials or gating of graphene by neighbouring layers, are important for further applications. Furthermore, electron scattering on defects modifies graphene properties in several ways, for example, additional scattering centres reduce carrier

• -called defect bands. In the case of graphene transferred onto NWs, the analysis of scattering on defects allows for one to trace how graphene structure changes after the deposition on NWs and how these changes depend on the density of NWs and their differences in height. An additional aspect is the